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CMP Slurry

CMP Polishing Slurry for Silicon Carbide Substrate

Sinmat is recognized as the leader in development of novel processes that enable chip and other manufacturers to develop more efficient devices and related products. It is singularly focused on providing its customers with customized planarization technologies that are critical in the manufacturing of computer chips, LEDs and power devices. Sinmat's planarization technologies also enable manufacturing of advanced substrate materials, used in military and other critical sectors of the economy.

米国SINMAT製RCMP Slurry

CHARACTERISTICS

CMP Polishing Slurry for Silicon Carbide Substrate

Si-Face CMP Polish

・Ultra high removal rate
・High speed planarization
・Complete elimination of sub-surface damage

C-Face CMP Polish

・Ultra high removal rate
・Extremely smooth surface finish

Mechanical Polish

・High speed polish after lapping
・Ultra high removal rate 10-20µm/h
・Low sub-surface damage

CMP Polishing Slurry for Nitride (GaN / AlN) substrate

Ga-Face CMP Polish

・Designed for mechanically polished wafers
・Up to 5X higher removal rates than current methods
・Efficient planarization and sub-surface damage removal

High finish CMP slurry

・Superior surface finish
・Complete elimination of sub-surface damage
・High speed CMP finish

N-Face CMP Polish

・Ultra high removal rate 2-5μm/h
・Ultra smooth surface finish

Mechanical Polishing

・High speed polish after lapping
・Ultra high removal rate8-10µm/h
・Low sub-surface damage

CMP Polishing Slurry for Sapphire Substrate
・High speed CMP finish
・Ultra smooth wafers(RMS~1A)
・Complete removal of sub-surface damage
・Low slurry consumption per wafer
・Low cost of ownership process
・Excellent stability / recycling capability
・Each orientation only
(C / A / R-Plane )
contact Contact us:03-3378-0128
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